symbol max fet1 max fet2 v ds 30 30 v gs 12 12 9.0 7.3 7.2 5.9 i dm 40 40 i ar 22 12 e ar 73 22 2.0 2.0 1.3 1.3 t j , t stg -55 to 150 -55 to 150 symbol typ max 48 62.5 74 90 r q jl 32 40 symbol typ max 48 62.5 74 90 r q jl 32 40 maximum junction-to-lead c steady-state c/w thermal characteristics fet2 parameter units maximum junction-to-ambient a t 10s r q ja c/w maximum junction-to-ambient a steady-state c/w avalanche current b a repetitive avalanche energy l=0.3mh b mj c maximum junction-to-ambient a steady-state a w units parameter power dissipation a t a =25c p dsm t a =70c absolute maximum ratings t a =25c unless otherwise noted vv gate-source voltage drain-source voltage c/w thermal characteristics fet1 parameter units maximum junction-to-ambient a t 10s r q ja c/w c/w continuous drain current a t a =25c maximum junction-to-lead c steady-state junction and storage temperature range t a =70c i dsm pulsed drain current b AO4922 asymmetric dual n-channel mosfet product summary fet1 fet2 v ds (v) = 30v v ds (v) = 30v i d = 9a i d =7.3a (v gs = 10v) r ds(on) < 15.8m w <24m w (v gs = 10v) r ds(on) < 18.5m w <29m w (v gs = 4.5v) 100% uis tested 100% rg tested general description the AO4922 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in dc - dc converters. a monolithically integrated schottky diode in parallel with the synchronous mosfet to boost efficiency further. srfet tm soic-8 top view bottom view pin1 g2 s2 g1 s1 d2 d2 d1 d1 2 4 5 1 3 86 7 top view srfet tm s oft r ecovery mos fet : integrated schottky diode g1 d1 s1 g2 d2s2 alpha & omega semiconductor, ltd.
AO4922 symbol min typ max units bv dss 30 v v ds =24v, v gs =0v 0.01 0.1 t j =125c 6 20 i gss 0.1 m a v gs(th) gate threshold voltage 1.5 1.8 2.4 v i d(on) 40 a 13 15.8 t j =125c 20.2 25.2 15 18.5 m w g fs 78 s v sd 0.38 0.5 v i s 4 a c iss 1980 2574 pf c oss 317 pf c rss 111 pf r g 1.3 2.0 w q g (10v) 33.0 43 q g (4.5v) 15.0 nc q gs 5.3 nc q gd 6.0 nc t d(on) 5.5 ns t r 5.5 ns t d(off) 27.0 ns t f 4.3 ns t rr 11 13 ns q rr 7 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =9a, di/dt=300a/ m s drain-source breakdown voltage on state drain current i d =250ua, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =9a reverse transfer capacitance i f =9a, di/dt=300a/ m s v ds =v gs i d =250 m a fet1 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current ma v ds =0v, v gs = 12v gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage maximum body-diode + schottky continuous current input capacitance output capacitance dynamic parameters m w v gs =4.5v, i d =7a i s =1a,v gs =0v v ds =5v, i d =9a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.7 w , r gen =3 w turn-off fall time turn-on delaytime total gate charge v gs =10v, v ds =15v, i d =9a gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz a: the value of r ja is measured with the device in a still air enviro nment with t a =25c. the power dissipation p dsm and current rating i dsm are based on t j(max) =150c, using t 10s junction-to-ambient thermal resistance. b: repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25c. the soa curve provides a single pulse rating. rev1: may 2011 alpha & omega semiconductor, ltd.
AO4922 fet1 typical electrical and thermal characteristics dynamic parameters 0 20 40 60 80 100 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) 10v 4.5v v gs =3.5v 6v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 10 12 14 16 18 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 30 60 90 120 150 180 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =9a v gs =10v v gs =4.5v 10 15 20 25 30 35 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125 v ds =5v v gs =4.5v v gs =10v i d =9a 25c 125c i d =7a alpha & omega semiconductor, ltd.
AO4922 fet1 typical electrical and thermal characteristics dynamic parameters 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s v ds =15v i d =9a 0 10 20 30 40 50 60 70 80 90 100 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure10: single pulse power rating junction-to- ambient (note e) power (w) t j(max) =150c t a =25c 1 s 10 s 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note e) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse alpha & omega semiconductor, ltd.
AO4922 fet1 typical electrical and thermal characteristics dynamic parameters 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 0 50 100 150 200 temperature (c) figure 12: diode reverse leakage current vs. junction temperature i r (a) vds=12v vds=24v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 50 100 150 200 temperature (c) figure 13: diode forward voltage vs. junction temperature v sd (v) 0 5 10 15 20 25 0 5 10 15 20 25 30 is (a) figure 14: diode reverse recovery charge and peak current vs. conduction current q rr (nc) 0 2 4 6 8 irm (a) di/dt=800a/us 0 3 6 9 12 15 0 5 10 15 20 25 30 is (a) figure 15: diode reverse recovery time and soft coefficient vs. conduction current trr (ns) 0 0.5 1 1.5 2 2.5 s i s =1a 10a 20a 0 5 10 15 20 25 0 200 400 600 800 1000 di/dt (a) figure 16: diode reverse recovery charge and peak current vs. di/dt q rr (nc) 0 1 2 3 4 5 6 7 8 9 10 irm (a) 0 3 6 9 12 15 18 0 200 400 600 800 1000 di/dt (a) figure 17: diode reverse recovery time and soft coefficient vs. di/dt trr (ns) 0 0.5 1 1.5 2 2.5 3 s di/dt=800a/us 125oc 125oc 125oc 125oc 125oc 125o 125oc 125oc 25oc 25oc 25oc 25oc 25oc 25oc 25oc 25oc is=20a is=20a qrr irm trr qrr irm trr s s 5a alpha & omega semiconductor, ltd.
AO4922 symbol min typ max units bv dss 30 v 0.002 1 t j =55c 5 i gss 100 na v gs(th) 0.7 1 1.5 v i d(on) 40 a 20 24 t j =125c 28 35 23.5 29 m w 34.7 48 m w g fs 26 s v sd 0.71 1 v i s 2.8 a c iss 900 1100 pf c oss 88 pf c rss 65 pf r g 0.95 1.5 w q g 10 12 nc q gs 1.8 nc q gd 3.75 nc t d(on) 3.2 ns t r 3.5 ns t d(off) 21.5 ns t f 2.7 ns t rr 16.8 21 ns q rr 8 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =7.3a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =2.5v, i d =5a v gs =4.5v, v ds =5v v gs =10v, i d =7.3a reverse transfer capacitance fet2 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =24v, v gs =0v v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i f =7.3a, di/dt=100a/ m s v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge v gs =4.5v, v ds =15v, i d =7.3a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =2 w , r gen =6 w turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters gate resistance v gs =0v, v ds =0v, f=1mhz m w v gs =4.5v, i d =6a i s =1a,v gs =0v v ds =5v, i d =7.3a a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user 's specific board design. the current rating is bas ed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev1: may 2011 alpha & omega semiconductor, ltd.
AO4922 fet2 typical electrical and thermal characteristics this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 10 20 30 40 50 60 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) v gs =2v 2.5v 3v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 15 20 25 30 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.6 0.9 1.2 1.5 1.8 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =7.3a i d =6a v gs =4.5v 10 15 20 25 30 35 40 45 50 55 60 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =7.3a 25c 125c alpha & omega semiconductor, ltd.
AO4922 fet2 typical electrical and thermal characteristics this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 1 2 3 4 5 0 2 4 6 8 10 12 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note e) z q qq q ja normalized transient thermal resistance c oss c rss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 1ms 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =7.3a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 100 m s alpha & omega semiconductor, ltd.
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